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HAT2200R
Silicon N Channel Power MOS FET Power Switching
REJ03G0232-0200Z Rev.2.00 Apr.05.2004
Features
* * * * Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V)
Outline
SOP-8
8 5 76
56 7 8 DD D D
3 12
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Rev.2.00, Apr.05.2004, page 1 of 7
HAT2200R
Absolute Maximum Ratings
(Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-a Note3 Tch Tstg Ratings 100 20 8 64 8 8 6.4 2.5 50 150 -55 to +150 Unit V V A A A A mJ W C/W C C
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
Electrical Characteristics
(Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 -- -- 3.5 -- -- 8 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 22 23 14 2300 280 90 1.3 32 12 8 16 4 32 4.5 0.79 45 Max -- 0.1 1 5.0 28 33 -- -- -- -- -- -- -- -- -- -- -- -- 1.03 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 4 A, VGS = 10 V Note4 ID = 4 A, VGS = 8 V Note4 ID = 4 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 8 A VGS = 10 V, ID = 4 A VDD 30 V RL = 7.5 Rg = 4.7 IF = 8 A, VGS = 0 Note4 IF = 8 A, VGS = 0 diF/ dt = 100 A/ s
Rev.2.00, Apr.05.2004, page 2 of 7
HAT2200R
Main Characteristics
Power vs. Temperature Derating 4.0 100 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 Maximum Safe Operation Area
10 s
Pch (W)
ID (A)
10
100 s
Channel Dissipation
Drain Current
1 Operation in this area is 0.1 limited by RDS(on)
DC Operation (PW 10 s)Note 5
2.0
1 ms
PW = 10 ms
1.0
0.01
0
50
100
150 Ta (C)
200
Ambient Temperature
Ta = 25C 0.001 1 shot Pulse 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Transfer Characteristics 20 VDS = 10 V Pulse Test 16
Typical Output Characteristics 20 5.8 V 10 V
ID (A)
16
12 5.6 V 8
VGS = 5.4 V
ID (A) Drain Current
6V
12 Tc = 75C 25C 4 -25C
Drain Current
8
4 Pulse Test 0 2 4 6 Drain to Source Voltage 10 8 VDS (V)
0
2 4 6 Gate to Source Voltage
10 8 VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
VDS(on) (mV)
250
Pulse Test
200
Drain to Source On State Resistance RDS(on) (m)
Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 VGS = 8 V 20 10 5 2 1 1 10 Drain Current 100 ID (A) 10 V
Drain to Source Voltage
150 ID = 5 A
100
50
2A 1A
0
5 10 15 20 Gate to Source Voltage VGS (V)
Rev.2.00, Apr.05.2004, page 3 of 7
HAT2200R
Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 1 A, 2 A, 5 A 40 Forward Transfer Admittance vs. Drain Current
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance |yfs| (S)
100 Tc = -25C 10 25C 75C 1 VDS = 10 V Pulse Test 0.1 0.3 1 3 10 30 100
30 VGS = 8 V 20 10 V 10 2 -25 ID = 1 A, 2 A, 5 A
0 25 50 75 100 125 150 Case Temperature Tc (C) Body-Drain Diode Reverse Recovery Time
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 300 Coss 100 30 10 0 VGS = 0 f = 1 MHz 10 20 30 40 50 Crss Ciss
100
Reverse Recovery Time trr (ns)
50
20 di/dt = 100 A/s VGS = 0, Ta = 25C 1 10 Reverse Drain Current IDR 100 (A)
10 0.1
Capacitance C (pF)
Drain to Source Voltage VDS (V) Switching Characteristics 20 1000
Dynamic Input Characteristics
VDS (V)
250
Switching Time t (ns)
200
Drain to Source Voltage
150
VDS
VGS 12
Gate to Source Voltage
VDS = 100 V 50 V 25 V
16
VGS (V)
ID = 8 A
VGS = 10 V, VDS = 30 V Rg = 4.7, duty < 1 % 100 td(off) td(on) 10 tr 1 0.1 tf
100
8
50
VDS = 100 V 50 V 25 V 10 20 30 40 Gate Charge Qg (nC)
4 0 50
0
1 Drain Current
10 ID (A)
100
Rev.2.00, Apr.05.2004, page 4 of 7
HAT2200R
Reverse Drain Current vs. Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating 10 IAP = 8 A VDD = 50 V duty < 0.1 % Rg > 50
20
(A)
16
10 V
VGS = 0 V, -5 V
8
Reverse Drain Current IF
12
6
8
4
4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSDF (V)
2 0 25
50 75 100 125 150 Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width 10
Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.1
0.2 0.1 0.05
0.01
0.02
0.01
1s t ho pu lse
ch - f(t) = s (t) x ch - f ch - f = 83.3C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
PDM PW T
0.001
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
Rev.2.00, Apr.05.2004, page 5 of 7
HAT2200R
Avalanche Test Circuit Avalanche Waveform EAR = 1 2 L * IAP2 * VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
Switching Time Test Circuit Vin Monitor Rg D.U.T. RL V DS = 30 V Vin Vout Vin 10 V Vout Monitor
Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10%
Rev.2.00, Apr.05.2004, page 6 of 7
HAT2200R
Package Dimensions
As of January, 2003
Unit: mm
4.90 5.3 Max 5 8
1
4
3.95
*0.22 0.03 0.20 0.03
1.75 Max
0.75 Max
6.10 - 0.30
+ 0.10
1.08 0 - 8
0.14 - 0.04
+ 0.11
1.27
+ 0.67 0.60 - 0.20
*0.42 0.08 0.40 0.06
0.15 0.25 M
*Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms -- 0.085 g
Ordering Information
Part Name HAT2200R-EL-E Quantity 2500pcs Shipping Container Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00, Apr.05.2004, page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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